Normally-off AlGaN/GaN heterostructure junction field-effect transistors with blocking layers
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.05.063
Abstract: Abstract In this study, normally-off AlGaN/GaN heterostructure junction field-effect transistors (HJFETs) with p-GaN cap layer were reported, in which intrinsic GaN were proposed as blocking layers between the p-GaN cap layer and the AlGaN layer… read more here.
Keywords: layer; heterostructure junction; algan gan; normally algan ... See more keywords
Junction Field-Effect Transistors Based on MoSe2/WSe2 Heterostructures for High-Performance Photodetection.
Sign Up to like & getrecommendations! Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c15167
Abstract: Two-dimensional (2D) materials show great potential in creating high-performance ultracompact photodetectors. Existing 2D photodetectors are usually designed based on a photogating effect or photovoltaic effect. However, achieving a balance between photodetectivity and photoresponsivity presents a… read more here.
Keywords: based mose2; effect; mose2 wse2; high performance ... See more keywords
Revisiting the role of oxidation in stable and high-performance lead-free perovskite-IGZO junction field-effect transistors
Sign Up to like & getrecommendations! Published in 2025 at "Nature Communications"
DOI: 10.1038/s41467-025-62770-2
Abstract: Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor… read more here.
Keywords: field; field effect; junction field; oxidation ... See more keywords
Study of drain-induced channel effects in vertical GaN junction field-effect transistors
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad462a
Abstract: A normally-off vertical gallium nitride (GaN) junction field-effect transistor (JFET) is demonstrated in this work. The device shows an on/off current ratio of 3.6 × 1010, a threshold voltage (V TH) of 1.64 V, and… read more here.
Keywords: channel effects; drain induced; gan junction; field effect ... See more keywords
Vertically integrated photo junction-field-effect transistor pixels for retinal prosthesis.
Sign Up to like & getrecommendations! Published in 2020 at "Biomedical optics express"
DOI: 10.1364/boe.11.000055
Abstract: Optoelectronic retinal prostheses transduce light into electrical current for neural stimulation. We introduce a novel optoelectronic pixel architecture consisting of a vertically integrated photo junction-field-effect transistor (Photo-JFET) and neural stimulating electrode. Experimental measurements demonstrate that… read more here.
Keywords: photo; vertically integrated; integrated photo; junction field ... See more keywords