Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS
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DOI: 10.1109/led.2024.3356123
Abstract: This letter presents a frontside-illuminated single-photon avalanche diode (SPAD) with high peak photon detection probability (PDP), low dark count rate and low jitter. A retrograde doped and separated deep n-well (DNW) combined with a junction-optimized… read more here.
Keywords: junction optimized; inline formula; peak; voltage ... See more keywords