Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2684093
Abstract: Simulations of reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) are presented. The p-type JTE is located at the edge of the main p-n-junction, and under reverse bias, the charge in… read more here.
Keywords: gan power; junction termination; power diodes; jte ... See more keywords
p-NiO junction termination extensions for GaN power devices
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac09ff
Abstract: We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities.… read more here.
Keywords: power devices; junction termination; termination extensions; termination ... See more keywords