Process compensated bipolar junction transistor‐based CMOS temperature sensor with a ±1.5°C (3σ) batch‐to‐batch inaccuracy
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DOI: 10.1049/el.2018.6447
Abstract: A bipolar junction transistor (BJT)-based CMOS temperature sensor exploiting the piecewise BJT process spread compensation property of the base recombination current is proposed to reduce the process variations of the base–emitter voltage (V be). The… read more here.
Keywords: temperature; process; junction transistor; batch ... See more keywords