Design and structural optimization of junctionless FinFET with Gaussian-doped channel
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1131-y
Abstract: A junctionless (JL) fin field-effect transistor (FinFET) structure with a Gaussian doping distribution, named the Gaussian-channel junctionless FinFET, is presented. The structure has a nonuniform doping distribution across the device layer and is designed with… read more here.
Keywords: design structural; junctionless; junctionless finfet; structure ... See more keywords
Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis
Sign Up to like & getrecommendations! Published in 2017 at "Optik"
DOI: 10.1016/j.ijleo.2017.03.071
Abstract: Abstract In this paper, graded channel doping (GCD) and junctionless paradigms are proposed as a new ways to improve the optical controlled field effect transistor (OCFET) and bridging the gap between the high responsivity and… read more here.
Keywords: junctionless; channel doping; sensitivity; performance ... See more keywords
Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications
Sign Up to like & getrecommendations! Published in 2017 at "Optics and Laser Technology"
DOI: 10.1016/j.optlastec.2017.06.002
Abstract: Abstract In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device… read more here.
Keywords: junctionless; performance low; low cost; performance ... See more keywords
Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c19596
Abstract: Junctionless transistors are suitable for sub-3 nm applications because of their extremely simple structure and high electrical performance, which compensate for short-channel effects. Two-dimensional semiconductor transition-metal dichalcogenide materials, such as MoS2, may also resolve technical… read more here.
Keywords: junctionless; electrostatically highly; mos2; highly doped ... See more keywords
Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2020.3020976
Abstract: In this article, an analytical predictive model of the negative capacitance (NC) effect in symmetric long channel double-gate junctionless transistor is proposed based on a charge-based model. In particular, we have investigated the effect of… read more here.
Keywords: junctionless; negative capacitance; double gate; effect ... See more keywords
Evaluation of Radiation Resiliency on Emerging Junctionless/Dopingless Devices and Circuits
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2019.2949064
Abstract: The growing concern of single event upset (SEU) in sub-20 nm CMOS technology based field-effect transistors (FETs) has become a key challenge. Therefore, in this paper we have investigated performance degradation of digital benchmark circuits… read more here.
Keywords: tex math; dopingless; jlt; junctionless ... See more keywords
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
Sign Up to like & getrecommendations! Published in 2020 at "Applied Sciences"
DOI: 10.3390/app10155327
Abstract: In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different… read more here.
Keywords: telegraph noise; random telegraph; junctionless; junctionless finfet ... See more keywords
Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12101639
Abstract: In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode… read more here.
Keywords: field effect; carbon nanotube; carbon; photosensitivity ... See more keywords
Designing a hetrostructure junctionless-field effect transistor (HJL-FET) for high-speed applications
Sign Up to like & getrecommendations! Published in 2017 at "Journal of the Korean Physical Society"
DOI: 10.3938/jkps.71.275
Abstract: This paper explores the impacts of both the strained silicon layer thickness, D, and germanium mole fraction, X, on the electrical characteristics of a heterostructure junctionless (HJL)-FET by a numerical simulator. The gate controllability on… read more here.
Keywords: junctionless; layer; hjl; hjl fet ... See more keywords