Ultrathin body nanowire hetero-dielectric stacked asymmetric halo doped junctionless accumulation mode MOSFET for enhanced electrical characteristics and negative bias stability
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DOI: 10.1016/j.spmi.2019.106364
Abstract: Abstract This paper presents a 2-D analytical model of ultrathin hetero dielectric, asymmetric halo doped graded channel (HDGC) nanowire junctionless accumulation mode (JAM) MOSFETs obtained by incorporating the concepts of gate-oxide engineering (i.e., hetero dielectric)… read more here.
Keywords: accumulation mode; asymmetric halo; hetero; halo doped ... See more keywords
Investigation of Single Event Transient Effects in Junctionless Accumulation Mode MOSFET
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DOI: 10.1109/tdmr.2020.3014176
Abstract: The Junctionless Accumulation Mode Double Gate MOSFET (JAM DG MOSFET) is a promising novel architecture for future nano-scaled devices because of its outstanding electrical characteristics, e.g., lower subthreshold swing, lower drain induced barrier lowering, i.e.,… read more here.
Keywords: transient; single event; mosfet; junctionless accumulation ... See more keywords