Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-016-0950-y
Abstract: Scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) to below a few tens of nanometer has failed to make significant improvements. FinFETs were introduced to replace MOS devices in circuits, offering good performance improvement in the nanoscale… read more here.
Keywords: junctionless finfet; based sram; finfet junctionless; finfet ... See more keywords
Design and structural optimization of junctionless FinFET with Gaussian-doped channel
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1131-y
Abstract: A junctionless (JL) fin field-effect transistor (FinFET) structure with a Gaussian doping distribution, named the Gaussian-channel junctionless FinFET, is presented. The structure has a nonuniform doping distribution across the device layer and is designed with… read more here.
Keywords: design structural; junctionless; junctionless finfet; structure ... See more keywords
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
Sign Up to like & getrecommendations! Published in 2020 at "Applied Sciences"
DOI: 10.3390/app10155327
Abstract: In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different… read more here.
Keywords: telegraph noise; random telegraph; junctionless; junctionless finfet ... See more keywords