Hole mobility in the ultra-thin-body junctionless germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistors
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DOI: 10.1063/1.5086890
Abstract: Junctionless Germanium-on-insulator (GOI) p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been realized with an ultra-thin-body (UTB) channel of down to 6 nm. The hole m... read more here.
Keywords: channel metal; germanium insulator; oxide semiconductor; metal oxide ... See more keywords