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Published in 2024 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2024.3409579
Abstract: This work aims to perform a comprehensive comparison of the electrical properties of junctionless and inversion-mode nanowires MOSFETS, fabricated with similar gate stack and state-of-art process, in the temperature range from 300 K to 580…
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Keywords:
inversion;
junctionless inversion;
inversion mode;
temperature ... See more keywords