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Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2772871
Abstract: The hot-carrier degradation of the junctionless mode (JM) and the inversion mode (IM) of five-story vertically integrated gate-all-around (GAA) MOSFETs is investigated for the first time. It is found that the degradation of drain current…
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Keywords:
mode;
junctionless mode;
vertically integrated;
inversion mode ... See more keywords