Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400338
Abstract: Ambipolar transistors facilitate concurrent transport of both positive (holes) and negative (electrons) charge carriers in the semiconducting channel. Effective manipulation of conduction symmetry and electrical characteristics in ambipolar silicon junctionless nanowire transistors (Si‐JNTs) is demonstrated… read more here.
Keywords: nitrogen dioxide; nanowire transistors; gaseous nitrogen; junctionless nanowire ... See more keywords
Microscopic simulation of RF noise in junctionless nanowire transistors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1199-4
Abstract: A deterministic solver for the analysis of microscopic noise and small-signal fluctuations in junctionless nanowire field-effect transistors is presented, which is based on a self-consistent and simultaneous solution of the Poisson/Schrödinger/Boltzmann equations. It is verified… read more here.
Keywords: microscopic simulation; junctionless nanowire; noise junctionless; noise ... See more keywords
Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit
Sign Up to like & getrecommendations! Published in 2019 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2019.06.014
Abstract: Abstract In this paper, the reliability issues due to localized charges on Double Gate Junctionless Nanowire Transistor (DG-JNT) based circuits are investigated. The localized/fixed charges come into existence at the interface of substrate and oxide… read more here.
Keywords: charge profiles; double gate; nanowire transistor; circuit ... See more keywords
Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2019.2931839
Abstract: This letter investigates the possibility to replace numerical TCAD device simulations with a multi-layer neural network (NN). We explore if it is possible to train the NN with the required accuracy in order to predict… read more here.
Keywords: learning approach; machine learning; effect; junctionless nanowire ... See more keywords
Impact of Externally Induced Uniaxial Stress on the Electrical Performance of the Junctionless Nanowire Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2025.3581604
Abstract: The uniaxial tensile mechanical stress (MS) is induced up to 1.4 GPa on the channel of the twin junctionless nanowire (JL-NW) gate-all-around (GAA) field-effect transistors (FETs) using a four-point bending technique. The variation of the… read more here.
Keywords: effect; performance; field effect; junctionless nanowire ... See more keywords