Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor
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DOI: 10.1016/j.aeue.2018.08.023
Abstract: Abstract A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT.… read more here.
Keywords: junctionless transistor; plasma based; charge; effect ... See more keywords