Impact of fin shapes and channel doping concentrations on the operation of junctionless transistors
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronic Engineering"
DOI: 10.1016/j.mee.2019.01.003
Abstract: Abstract The influence of variations in the Si fin shape on the electrical properties of junctionless transistors (JLTs) was investigated through two-dimensional Poisson equation numerical simulations at different doping concentrations. Stronger gate coupling in a… read more here.
Keywords: impact fin; doping concentrations; channel doping; junctionless transistors ... See more keywords
Accurate determination of low-field mobility in tri-gate junctionless transistors
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab607d
Abstract: The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs… read more here.
Keywords: low field; tri gate; accurate determination; field mobility ... See more keywords
Back-Gate Bias-Controllable Subthreshold Slope of Junctionless Transistors
Sign Up to like & getrecommendations! Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2025.3571396
Abstract: Junctionless transistors (JLTs) are one of the next-generation logic transistors for sub-3-nm technology nodes with several advantages, including very simple structure, no p-n junctions at source and drain, and bulk conduction-based operation. In this work,… read more here.
Keywords: junctionless transistors; tex math; inline formula;