Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate
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DOI: 10.1038/s41598-024-61683-2
Abstract: We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the… read more here.
Keywords: graphene junctions; study; junctions formed; sio2 substrate ... See more keywords