Transient evolution of built-in field at junctions of GaAs photoelectrodes.
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DOI: 10.1021/acsami.0c11474
Abstract: Built-in electric fields at semiconductor junctions are vital for optoelectronic and photocatalytic applications since they govern the movement of photogenerated charge carriers near critical surfaces and interfaces. Here, we exploit transient photoreflectance (TPR) spectroscopy to… read more here.
Keywords: evolution built; gaas photoelectrodes; field; built field ... See more keywords