Carbon Nanotube-Based CMOS SRAM: 1 kbit 6T SRAM Arrays and 10T SRAM Cells
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DOI: 10.1109/ted.2019.2945533
Abstract: We experimentally demonstrate the first static random-access memory (SRAM) arrays based on carbon nanotube (CNT) field-effect transistors (CNFETs). We demonstrate 1 kbit (1024) 6 transistor (6T) SRAM arrays fabricated with complementary metal-oxide-semiconductor (CMOS) CNFETs (totaling… read more here.
Keywords: sram cells; carbon nanotube; 10t sram; kbit ... See more keywords