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Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.04.026
Abstract: Abstract The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral…
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Keywords:
sige structures;
structures different;
kelvin force;
force raman ... See more keywords