Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System
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DOI: 10.3390/ma15113768
Abstract: The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a precursor for CVD of SiC with a wide range of… read more here.
Keywords: growth; kinetic mechanisms; deposition; gaseous system ... See more keywords
Kinetic Mechanisms and Emissions Investigation of Torrefied Pine Sawdust Utilized as Solid Fuel by Isothermal and Non-Isothermal Experiments
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DOI: 10.3390/ma15238650
Abstract: This study comprehensively investigated the utilization of torrefied pine sawdust (PS) as solid fuels, involving the characterization of torrefied PS properties, the investigation of combustion behaviors and kinetic mechanisms by non-isothermal experiments, and the evaluation… read more here.
Keywords: isothermal experiments; fuel; kinetic mechanisms; combustion ... See more keywords