Polarization Switching Kinetics in Thin Ferroelectric HZO Films
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DOI: 10.3390/nano12234126
Abstract: Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption… read more here.
Keywords: polarization switching; switching kinetics; model; hzo ... See more keywords