Sputtered L10‐FePd and its Synthetic Antiferromagnet on Si/SiO2 Wafers for Scalable Spintronics
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202214201
Abstract: As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA), L10‐FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at… read more here.
Keywords: sio2 wafers; seed; fepd synthetic; l10 fepd ... See more keywords
Unveiling a Chemisorbed Crystallographically Heterogeneous Graphene/L10-FePd Interface with a Robust and Perpendicular Orbital Moment
Sign Up to like & getrecommendations! Published in 2022 at "ACS Nano"
DOI: 10.1021/acsnano.1c09843
Abstract: A crystallographically heterogeneous interface was fabricated by growing hexagonal graphene (Gr) using chemical vapor deposition (CVD) on a tetragonal FePd epitaxial film grown by magnetron sputtering. FePd was alternately arranged with Fe and Pd in… read more here.
Keywords: l10; fepd interface; crystallographically heterogeneous; interface ... See more keywords
Enhancement of tunneling magnetoresistance by inserting a diffusion barrier in L10-FePd perpendicular magnetic tunnel junctions
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DOI: 10.1063/1.5019193
Abstract: We studied the tunnel magnetoresistance (TMR) of L10-FePd perpendicular magnetic tunnel junctions (p-MTJs) with an FePd free layer and an inserted diffusion barrier. The diffusion barriers studied here (Ta and W) were shown to enhance… read more here.
Keywords: l10 fepd; diffusion barrier; tunnel; diffusion ... See more keywords