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Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b21150
Abstract: The absence of high performance p-type transparent semiconductor still remains as a roadblock to the development of future generation optoelectronics. Here, highly conducting p-type transparent semiconductor based on Y incorporated LaCuOS oxychalcogenide is achieved for…
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Keywords:
gap;
new highly;
semiconductor;
la1 xyxcuos ... See more keywords