Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
Sign Up to like & getrecommendations! Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2016.11.016
Abstract: Abstract Electrical properties of epitaxial La 2 O 3 /germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La 2 O 3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic… read more here.
Keywords: la2o3 la2o3; la2o3 high; doped la2o3; epitaxial doped ... See more keywords
Tuning La2O3 to high ionic conductivity by Ni-doping.
Sign Up to like & getrecommendations! Published in 2022 at "Chemical communications"
DOI: 10.1039/d1cc07183a
Abstract: Ni-doped La2O3 was developed as an ionic conducting membrane corresponding to a conductivity of 0.187 S cm-1 at 550 °C. A peak power density of 970 mW cm-2 with an open circuit voltage of 1.05… read more here.
Keywords: conductivity doping; tuning la2o3; high ionic; conductivity ... See more keywords