Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks
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DOI: 10.1016/j.mssp.2016.11.016
Abstract: Abstract Electrical properties of epitaxial La 2 O 3 /germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La 2 O 3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic… read more here.
Keywords: la2o3 la2o3; la2o3 high; doped la2o3; epitaxial doped ... See more keywords