Characteristic of SiC Slurry in Ultra Precision Lapping of Sapphire Substrates
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DOI: 10.1007/s12541-021-00521-1
Abstract: A method is proposed in this paper to prepare a SiC slurry with SiC particles selected by an ultrasonic-assisted elutriation method to reduce substrate surface damage caused by abrasive particles during lapping. Sapphire substrate lapping… read more here.
Keywords: slurry; sapphire substrates; lapping sapphire; sic slurry ... See more keywords