Articles with "laser annealing" as a keyword



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Theoretical study of the laser annealing process in FinFET structures

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Published in 2019 at "Applied Surface Science"

DOI: 10.1016/j.apsusc.2018.10.155

Abstract: Abstract In this paper we present a computational tool for the simulation of laser annealing processes in FinFET structures. This is a complex self-consistent problem, where heating is evaluated by means of the time harmonic… read more here.

Keywords: theoretical study; process; study laser; finfet structures ... See more keywords
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Diode laser annealing of epitaxy Ge on sapphire (0 0 0 1) grown by magnetron sputtering

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Published in 2017 at "Materials Letters"

DOI: 10.1016/j.matlet.2017.05.043

Abstract: Abstract In this work, magnetron sputtering was used to epitaxially grow Ge films on sapphire at low temperatures (400 °C–500 °C) and diode laser annealing was employed to improve the crystallinity of the Ge films. The deposition… read more here.

Keywords: annealing epitaxy; magnetron sputtering; laser; sapphire ... See more keywords
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High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications

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Published in 2017 at "Microelectronic Engineering"

DOI: 10.1016/j.mee.2016.10.002

Abstract: Abstract In this work, we explored a novel technique for the formation of ultra-shallow p+/n and n+/p junctions on Ge substrate using the spin-on dopant (SOD) followed by laser annealing (LA). The junction depth and… read more here.

Keywords: technique; ultra shallow; formation; shallow junctions ... See more keywords
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Large single-crystal Ge-on-insulator by thermally-assisted (~400 °C) Si-seeded-pulse-laser annealing

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Published in 2017 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2016.10.033

Abstract: Abstract Low temperature (≤400 °C) formation of orientation-controlled large (≥10 µm) Ge-on-insulator (GOI) structures is desired to fabricate 3-dimensional large-scale integrated circuits (LSIs), where Ge-based functional devices are stacked on Si-LSIs. For this purpose, Si-seeded pulse-laser annealing… read more here.

Keywords: temperature; thermally assisted; laser annealing; seeded pulse ... See more keywords
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Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

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Published in 2019 at "Materials Science in Semiconductor Processing"

DOI: 10.1016/j.mssp.2019.02.031

Abstract: Abstract This work reports on the morphological and electrical properties of Ni-based back-side Ohmic contacts formed by laser annealing process for SiC power diodes. Nickel films, 100 nm thick, have been sputtered on the back-side of… read more here.

Keywords: morphological electrical; ohmic contacts; process; laser annealing ... See more keywords
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Investigation of minority carrier traps in p-type mc-Si: Effect of firing and laser annealing

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Published in 2021 at "Solar Energy Materials and Solar Cells"

DOI: 10.1016/j.solmat.2021.111341

Abstract: Abstract Recently, it has been shown that the investigation of minority carrier traps (traps) is a useful method to study defects in silicon wafers. In this paper, we report the presence of traps in p-type… read more here.

Keywords: traps type; carrier traps; investigation minority; laser annealing ... See more keywords
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Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors

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Published in 2019 at "Thin Solid Films"

DOI: 10.1016/j.tsf.2019.04.023

Abstract: Abstract We report the thickness effect of amorphous silicon for the polycrystalline silicon (poly-Si) layer laterally crystallized by blue laser annealing (BLA) using 50 μs melting time. The grain size is much larger and full width… read more here.

Keywords: blue laser; thin film; silicon; laser annealing ... See more keywords
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Macroscopic Alignment of Block Copolymers on Silicon Substrates by Laser Annealing

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Published in 2020 at "ACS Nano"

DOI: 10.1021/acsnano.0c00696

Abstract: Laser annealing is a competitive alternative to conventional oven annealing of block copolymer (BCP) thin films enabling rapid acceleration and precise spatial control of the self-assembly process. Localized heating by a moving laser beam (zone… read more here.

Keywords: macroscopic alignment; laser; laser annealing; alignment block ... See more keywords
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Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing.

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Published in 2021 at "ACS nano"

DOI: 10.1021/acsnano.1c07169

Abstract: Atomically thin semiconductors such as transition metal dichalcogenides have recently enabled diverse devices in the emerging two-dimensional (2D) electronics. While scalable 2D electronics demand monolithic integrated circuits consisting of complementary p-type and n-type transistors, conventional… read more here.

Keywords: laser annealing; laser; mote2; logic circuits ... See more keywords
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Electronic, Structural, and Magnetic Upgrading of Coal-Based Products through Laser Annealing.

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Published in 2022 at "ACS nano"

DOI: 10.1021/acsnano.1c07693

Abstract: Most coal-to-product routes require complex thermal treatment to carbonize the raw materials. However, the lack of unified comparison of products made from different kinds of coals downplays the role of initial coal chemistry in high-temperature… read more here.

Keywords: laser annealing; electronic structural; chemistry; coal ... See more keywords
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Laser annealing of electrodeposited CuInSe2 semiconductor precursors: experiment and modeling

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Published in 2017 at "Journal of Materials Chemistry C"

DOI: 10.1039/c6tc03623f

Abstract: Laser annealing can reduce the annealing time required to form Cu(In,Ga)(S,Se)2 (CIGSe) thin films for use in thin film photovoltaics to a single second timescale, if not faster. In this work, we use microstructural characterization… read more here.

Keywords: electrodeposited cuinse2; optical absorption; laser; cuinse2 semiconductor ... See more keywords