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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08159-x
Abstract: Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of holes into…
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Keywords:
ingan quantum;
quantum wells;
laser diodes;
photoluminescence ... See more keywords
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Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.02.016
Abstract: Abstract In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL…
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Keywords:
electron blocking;
role electron;
blocking layer;
laser diodes ... See more keywords
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Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5120302
Abstract: We propose a type-II AlInN/ZnGeN2 quantum well (QW) structure serving as the active region for ultraviolet (UV) laser diodes. A remarkably low threshold current density can be achieved using the type-II AlInN/ZnGeN2 QW structure, providing…
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Keywords:
type alinn;
ultraviolet laser;
alinn zngen2;
laser diodes ... See more keywords
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Published in 2020 at "AIP Advances"
DOI: 10.1063/1.5143802
Abstract: Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow–green and short-wave infrared bands, defect emissions were observed even…
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Keywords:
gan based;
bands thermal;
laser diodes;
infrared emission ... See more keywords
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Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0051126
Abstract: We investigated the cavity facet degradation of unsealed GaN-based laser diodes (LDs). It was found that the decrease of optical output power accompanied by undulation for unsealed LDs is related to the facet degradation. Deposits…
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Keywords:
facet degradation;
degradation;
gan based;
laser diodes ... See more keywords
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Published in 2023 at "AIP Advances"
DOI: 10.1063/5.0140589
Abstract: Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown…
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Keywords:
green laser;
properties ingan;
laser diodes;
algan interlayer ... See more keywords
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Published in 2017 at "Chinese Physics Letters"
DOI: 10.1088/0256-307x/34/1/017101
Abstract: The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature…
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Keywords:
laser;
gan based;
laser diodes;
violet laser ... See more keywords
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Published in 2020 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/abd4a5
Abstract: The impact of hydrogen impurities in the semiconductor heterostructure of (InAlGa)N-based laser diodes on the stability of the device’s operating voltage is investigated. Diodes emitting at a wavelength of around 400 nm with different hydrogen…
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Keywords:
voltage;
inalga based;
hydrogen;
operating voltage ... See more keywords
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Published in 2020 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/41/3/032901
Abstract: A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed…
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Keywords:
laser;
wall plug;
high wall;
power ... See more keywords
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Published in 2017 at "IEEE Photonics Journal"
DOI: 10.1109/jphot.2017.2679719
Abstract: A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It…
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Keywords:
quantum;
ingan gan;
gan shallower;
shallower quantum ... See more keywords
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Published in 2017 at "IEEE Photonics Journal"
DOI: 10.1109/jphot.2017.2744803
Abstract: Tandem pumping technique are traditionally adopted to develop >3-kW continuous-wave (cw) Yb3+-doped fiber lasers, which are usually pumped by other fiber lasers at shorter wavelengths (1018 nm e.g.,). Fiber lasers directly pumped by laser diodes have…
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Keywords:
directly pumped;
pumped laser;
fiber lasers;
fiber ... See more keywords