Articles with "laser diodes" as a keyword



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Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

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Published in 2020 at "Journal of Electronic Materials"

DOI: 10.1007/s11664-020-08159-x

Abstract: Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN waveguide influence the injection efficiency of holes into… read more here.

Keywords: ingan quantum; quantum wells; laser diodes; photoluminescence ... See more keywords
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Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

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Published in 2018 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2018.02.016

Abstract: Abstract In this work, we investigate the role of the electron blocking layer (EBL) in laser diodes based on a graded index separate confinement heterostructure. We compare two sets of devices with very different EBL… read more here.

Keywords: electron blocking; role electron; blocking layer; laser diodes ... See more keywords
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Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes

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Published in 2019 at "Journal of Applied Physics"

DOI: 10.1063/1.5120302

Abstract: We propose a type-II AlInN/ZnGeN2 quantum well (QW) structure serving as the active region for ultraviolet (UV) laser diodes. A remarkably low threshold current density can be achieved using the type-II AlInN/ZnGeN2 QW structure, providing… read more here.

Keywords: type alinn; ultraviolet laser; alinn zngen2; laser diodes ... See more keywords
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Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

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Published in 2020 at "AIP Advances"

DOI: 10.1063/1.5143802

Abstract: Broad emission bands due to defects in (In,Ga,Al)N laser diodes operating at 440 nm are investigated using continuous-wave and pulsed currents. In addition to known yellow–green and short-wave infrared bands, defect emissions were observed even… read more here.

Keywords: gan based; bands thermal; laser diodes; infrared emission ... See more keywords
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New mechanisms of cavity facet degradation for GaN-based laser diodes

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Published in 2021 at "Journal of Applied Physics"

DOI: 10.1063/5.0051126

Abstract: We investigated the cavity facet degradation of unsealed GaN-based laser diodes (LDs). It was found that the decrease of optical output power accompanied by undulation for unsealed LDs is related to the facet degradation. Deposits… read more here.

Keywords: facet degradation; degradation; gan based; laser diodes ... See more keywords
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Optical and structural properties of InGaN/GaN quantum well green laser diodes with AlGaN interlayer

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Published in 2023 at "AIP Advances"

DOI: 10.1063/5.0140589

Abstract: Scanning transmission electron microscope and temperature-dependent photoluminescence were used to study the effects of AlGaN interlayer (IL) following InGaN quantum wells (QWs) on the structural and optical properties of InGaN green laser diodes (LDs) grown… read more here.

Keywords: green laser; properties ingan; laser diodes; algan interlayer ... See more keywords
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Performance Improvement of GaN-Based Violet Laser Diodes

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Published in 2017 at "Chinese Physics Letters"

DOI: 10.1088/0256-307x/34/1/017101

Abstract: The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature… read more here.

Keywords: laser; gan based; laser diodes; violet laser ... See more keywords
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Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device’s operating voltage

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Published in 2020 at "Journal of Physics D: Applied Physics"

DOI: 10.1088/1361-6463/abd4a5

Abstract: The impact of hydrogen impurities in the semiconductor heterostructure of (InAlGa)N-based laser diodes on the stability of the device’s operating voltage is investigated. Diodes emitting at a wavelength of around 400 nm with different hydrogen… read more here.

Keywords: voltage; inalga based; hydrogen; operating voltage ... See more keywords
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High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W

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Published in 2020 at "Journal of Semiconductors"

DOI: 10.1088/1674-4926/41/3/032901

Abstract: A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission, and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated. Special pretreatment and passivation for the chip facets were performed… read more here.

Keywords: laser; wall plug; high wall; power ... See more keywords
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Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes

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Published in 2017 at "IEEE Photonics Journal"

DOI: 10.1109/jphot.2017.2679719

Abstract: A series of samples with a different InGaN/GaN shallower-quantum well (SQW) interlayer are grown, and their effects on optical properties of InGaN/GaN multi-quantum wells and optical confinement factor of laser diodes (LDs) are investigated. It… read more here.

Keywords: quantum; ingan gan; gan shallower; shallower quantum ... See more keywords
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5 kW Near-Diffraction-Limited and 8 kW High-Brightness Monolithic Continuous Wave Fiber Lasers Directly Pumped by Laser Diodes

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Published in 2017 at "IEEE Photonics Journal"

DOI: 10.1109/jphot.2017.2744803

Abstract: Tandem pumping technique are traditionally adopted to develop >3-kW continuous-wave (cw) Yb3+-doped fiber lasers, which are usually pumped by other fiber lasers at shorter wavelengths (1018 nm e.g.,). Fiber lasers directly pumped by laser diodes have… read more here.

Keywords: directly pumped; pumped laser; fiber lasers; fiber ... See more keywords