Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.
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DOI: 10.1364/oe.26.007022
Abstract: We report the first demonstration of direct modulation of InAs/GaAs quantum dot (QD) lasers grown on on-axis (001) Si substrate. A low threading dislocation density GaAs buffer layer enables us to grow a high quality… read more here.
Keywords: quantum dot; epitaxially grown; lasers epitaxially; dot lasers ... See more keywords