A New Structure for Lateral Double Diffused MOSFET to Control the Breakdown Voltage and the On-Resistance
Sign Up to like & getrecommendations! Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-0092-5
Abstract: Lateral Double Diffused Metal Oxide Field Effect Transistor (LDMOS) are widely used in power applications for the high breakdown voltage. However, the device may have high on-resistance. So, the challenge for achieving high breakdown voltage… read more here.
Keywords: voltage; breakdown voltage; resistance; structure ... See more keywords