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Published in 2019 at "APL Materials"
DOI: 10.1063/1.5051058
Abstract: We demonstrate the epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy. We prepared patterned SiO2 masks on a (0001) α-Ga2O3/sapphire template, and then α-Ga2O3 islands were regrown selectively on the mask windows. The…
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Keywords:
ga2o3;
halide vapor;
epitaxial lateral;
lateral overgrowth ... See more keywords
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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5100246
Abstract: We demonstrate that Pd nanoparticle/single-walled carbon nanotubes (Pd-SWCNTs) can be used to improve the quality of α-Ga2O3 crystals using halide vapor phase epitaxy (HVPE) methods. We employed Pd-SWCNTs as the nanoepitaxial lateral overgrowth (ELOG) mask…
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Keywords:
halide vapor;
nanoepitaxial lateral;
vapor phase;
lateral overgrowth ... See more keywords
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Published in 2019 at "Optics express"
DOI: 10.1364/oe.27.024717
Abstract: A nonpolar edge emitting thin film InGaN laser diode has been separated from its native substrate by mechanical tearing with adhesive tape, combining the benefits of Epitaxial Lateral Overgrowth (ELO) and cleavability of nonpolar GaN…
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Keywords:
laser diode;
thin film;
ingan laser;
epitaxial lateral ... See more keywords
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Published in 2019 at "Optical Materials Express"
DOI: 10.1364/ome.9.001488
Abstract: We fabricate and study direct InP/Si heterojunction by corrugated epitaxial lateral overgrowth (CELOG). The crystalline quality and depth-dependent charge carrier dynamics of InP/Si heterojunction are assessed by characterizing the cross-section of grown layer by low-temperature…
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Keywords:
heterojunction;
direct inp;
corrugated epitaxial;
inp heterojunction ... See more keywords