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Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.12.005
Abstract: Abstract This paper reports a lateral PIN polysilicon photodiode on standard bulk complementary metal-oxidesemiconductor (CMOS) process for monolithically integrated high-speed optoelectronic integrated circuits (OEIC). A nominal undoped polysilicon as the photodetection area is intentionally created…
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Keywords:
process;
lateral pin;
cmos process;
standard bulk ... See more keywords