Investigation of the on-state behaviors of the variation of lateral width LDMOS device by simulation
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DOI: 10.1088/1674-4926/39/11/114007
Abstract: The main content revolves round the on-state characteristics of the variation of a lateral width (VLW) LDMOS device. A three-dimensional numerical analysis is performed to investigate the specific on-resistance of the VLW LDMOS device, the… read more here.
Keywords: device simulation; variation lateral; ldmos device; lateral width ... See more keywords