Halide Double‐Perovskite Light‐Emitting Centers Embedded in Lattice‐Matched and Coherent Crystalline Matrix
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202000653
Abstract: Through first‐principles calculations, it is found that two lattice‐matched halide double‐perovskites, Cs2NaBiBr6 and Cs2AgBiBr6, have a type‐I band alignment and can form highly miscible alloys in which the disordering makes the bandgaps become direct and… read more here.
Keywords: halide double; lattice matched; lattice; crystalline matrix ... See more keywords
Room‐Temperature Gate‐Tunable Nonreciprocal Charge Transport in Lattice‐Matched InSb/CdTe Heterostructures
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Materials"
DOI: 10.1002/adma.202207322
Abstract: Symmetry manipulation can be used to effectively tailor the physical order in solid‐state systems. With the breaking of both the inversion and time‐reversal symmetries, nonreciprocal magneto‐transport may arise in nonmagnetic systems to enrich spin–orbit effects.… read more here.
Keywords: insb cdte; room temperature; lattice matched; transport ... See more keywords
In Situ Induced Lattice-Matched Interfacial Oxygen-Passivation-Layer Endowing Li-Rich and Mn-Based Cathodes with Ultralong Life.
Sign Up to like & getrecommendations! Published in 2022 at "Small"
DOI: 10.1002/smll.202200942
Abstract: The high capacity of Li-rich and Mn-based (LRM) cathode materials is originally due to the unique hybrid anion- and cation redox, which also induces detrimental oxygen escape. Furthermore, the counter diffusion of released oxygen (into… read more here.
Keywords: passivation layer; lattice matched; oxygen passivation; rich based ... See more keywords
Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.10.025
Abstract: Abstract The growth of quaternary Ga 0.68 In 0.32 As 0.35 P 0.65 by metal-organic vapor phase epitaxy is very sensitive to growth conditions because the composition is within a miscibility gap. In this investigation,… read more here.
Keywords: matched gainasp; microscopy; within miscibility; lattice matched ... See more keywords
Evolution of indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.08.016
Abstract: Abstract The impact of growth conditions on indium segregation in metal-polar In0.17Al0.83N lattice-matched to GaN grown by plasma assisted molecular beam epitaxy is reported. A series of lattice-matched InAlN films was systematically grown over a… read more here.
Keywords: in0 17al0; metal polar; lattice matched; 17al0 83n ... See more keywords
Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility
Sign Up to like & getrecommendations! Published in 2020 at "npj Computational Materials"
DOI: 10.1038/s41524-019-0270-4
Abstract: BAs is a III–V semiconductor with ultra-high thermal conductivity, but many of its electronic properties are unknown. This work applies predictive atomistic calculations to investigate the properties of BAs heterostructures, such as strain effects on… read more here.
Keywords: mobility; strain effects; effects band; lattice matched ... See more keywords
Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP
Sign Up to like & getrecommendations! Published in 2018 at "Scientific Reports"
DOI: 10.1038/s41598-018-27507-w
Abstract: The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm.… read more here.
Keywords: ratio; matched inp; alas0 56sb0; lattice matched ... See more keywords
High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4986311
Abstract: We demonstrate high-performance ultraviolet photodetectors (UV-PDs) based on lattice-matched (LM) InAlN/AlGaN heterostructure field-effect transistors (HFETs) gated by transparent ITO films. Low dark currents of 6.8 × 10−8 and 6.1 × 10−7 A/mm and high photocurrent gains over four and three… read more here.
Keywords: based lattice; inaln algan; performance ultraviolet; ultraviolet photodetectors ... See more keywords
Self-organized lattice-matched epitaxy of Si 1-x Sn x alloys on (001)-oriented Si, Ge, and InP substrates
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4995812
Abstract: The crystal growth of single-crystalline Si1−xSnx layers with various Sn contents and analytical comparisons of their fundamental physical properties are strongly desired for next-generation group-IV electronics. In the present study, Si1−xSnx layers with varying Sn… read more here.
Keywords: oriented inp; 001 oriented; lattice matched; si1 xsnx ... See more keywords
Lattice-matched AlInN/GaN multi-channel heterostructure and HEMTs with low on-resistance
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Letters"
DOI: 10.1063/5.0063638
Abstract: In this paper, a high-performance multi-channel heterostructure based on lattice-matched AlInN/GaN has been reported. The stacking of five heterostructures yields a high two-dimensional electron gas density of 3.67 × 1013 cm−2 and a small sheet resistance (RSH) of… read more here.
Keywords: gan multi; multi channel; alinn gan; channel ... See more keywords
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/1/017803
Abstract: A new approach to fabricating high-quality AlInGaN film as a lattice-matched barrier layer in multiple quantum wells (MQWs) is presented. The high-quality AlInGaN film is realized by growing the AlGaN/InGaN short period superlattices through metalorganic… read more here.
Keywords: multiple quantum; ingan alingan; lattice matched; mqws ... See more keywords