Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202001283
Abstract: Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately, only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high quality nitrogen‐polarity GaN films on transferred graphene… read more here.
Keywords: polarity gan; gan films; nitrogen; light emitting ... See more keywords
Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111).
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c23381
Abstract: Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however,… read more here.
Keywords: iii nitride; lattice polarity; interfacial modulated; nitride heterostructures ... See more keywords