Sub-nanometer heating depth of atomic layer annealing
Sign Up to like & getrecommendations! Published in 2020 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2020.146615
Abstract: Abstract Conventional annealing techniques face tremendous challenges in nanoscale fabrication. For example, the heating depth of conventional annealing techniques is much greater than the critical dimension of nanoscale devices, resulting in excessive thermal budget and… read more here.
Keywords: atomic layer; heating depth; layer annealing; nanometer heating ... See more keywords
Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
Sign Up to like & getrecommendations! Published in 2018 at "ACS Sustainable Chemistry & Engineering"
DOI: 10.1021/acssuschemeng.8b03982
Abstract: Heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>1000 °C) are required to achieve high-quality GaN epilayers by conventional… read more here.
Keywords: quality; microscopy; layer; atomic layer ... See more keywords
Contaminant-free layer-by-layer annealing to improve the properties of HfO2/SiO2 optical films for the fs laser.
Sign Up to like & getrecommendations! Published in 2024 at "Optics express"
DOI: 10.1364/oe.529303
Abstract: The low laser-induced damage threshold (LIDT) of HfO2/SiO2 films is an important factor in limiting the further development of high repetition rate femtosecond (fs) laser systems. Conventional whole-layer annealing can effectively improve the properties of… read more here.
Keywords: layer; layer layer; hfo2 sio2; sio2 films ... See more keywords