High-performance BiFe0.95Mn0.05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer
Sign Up to like & getrecommendations! Published in 2017 at "Materials Letters"
DOI: 10.1016/j.matlet.2017.01.125
Abstract: Abstract The highly (1 1 1)-oriented BiFe0.95Mn0.05O3 (BFMO) films owning excellent ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La0.7Sr0.3MnO3 (LSMO)/TiO2 bi-layer buffer by pulsed laser deposition. By means of the LSMO/TiO2 bi-layer buffer,… read more here.
Keywords: lsmo tio2; tio2 layer; layer buffer; film ... See more keywords
A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)
Sign Up to like & getrecommendations! Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce00813f
Abstract: We report a unique AlN/AlInN bi-layer buffer design to enable the growth of textured c-axis wurtzite Al0.36In0.64N epilayer on a Si (111) substrate, which creates the possibility to grow high crystal quality Al0.36In0.64N. read more here.
Keywords: enable growth; high crystal; crystal quality; al0 36in0 ... See more keywords