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Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202403864
Abstract: HfO2‐based ferroelectrics offer promises for next‐generation nonvolatile nanoscale devices owing to excellent CMOS compatibility and robust ferroelectricity at the nanoscale. However, fundamentally understanding the mechanism of polarization reversal and domain dynamics is challenging because the…
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Keywords:
layer domain;
spacer layer;
domain dynamics;
domain ... See more keywords