Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO2 films formed by reactive sputtering
Sign Up to like & getrecommendations! Published in 2018 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.04.093
Abstract: Abstract 10 nm-thick ferroelectric (FE) HfO2 films with 1.5 mol% yttrium-doping were fabricated by mid-frequency reactive magnetron co-sputtering deposition on bare Si and underlying metal Hf. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from… read more here.
Keywords: doped hfo2; effects buffer; layer; buffer layer ... See more keywords