Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
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DOI: 10.1116/1.4978026
Abstract: The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in… read more here.
Keywords: assisted atomic; layer epitaxy; atomic layer; plasma assisted ... See more keywords