Cryogenic-Assisted Hydrogen Fluoride Surface Reactions Enabling Reversibly Ultra-High Selectivity of Atomic Layer Etching Between SiO2 and SiN.
Sign Up to like & getrecommendations! Published in 2025 at "Small methods"
DOI: 10.1002/smtd.202501744
Abstract: Atomic‐level precision processes are increasingly essential for advanced semiconductor devices with highly‐complicated small features. Plasma‐enhanced atomic layer etching (ALE) is considered as a promising technique to meet requirements of material diversity and highly selective processing.… read more here.
Keywords: layer; sio2 sin; atomic layer; sin ... See more keywords
Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
Sign Up to like & getrecommendations! Published in 2020 at "Solar Energy Materials and Solar Cells"
DOI: 10.1016/j.solmat.2020.110501
Abstract: Abstract By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300- ∘ C) annealing plays… read more here.
Keywords: gaas substrates; gaas; post bonding; sacrificial layer ... See more keywords
Thermal Atomic Layer Etching of MoS2 Using MoF6 and H2O
Sign Up to like & getrecommendations! Published in 2023 at "Chemistry of Materials"
DOI: 10.1021/acs.chemmater.2c02549
Abstract: Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition… read more here.
Keywords: atomic layer; layer; thermal atomic; mos2 ... See more keywords
Volatile Etch Species Produced during Thermal Al2O3 Atomic Layer Etching
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.9b06104
Abstract: The thermal atomic layer etching (ALE) of Al2O3 can be achieved using sequential fluorination and ligand-exchange reactions. Although previous investigations have characterized the etch rates and surface chemistry, no reports have identified the volatile etch… read more here.
Keywords: etch species; atomic layer; chemistry; etch ... See more keywords
Patterning of Mg-Based Oxide Semiconductors (MgZnO) at Sub-100 nm Pitches: Reactive Ion Etching versus Atomic Layer Etching.
Sign Up to like & getrecommendations! Published in 2025 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.5c12715
Abstract: Magnesium-based oxide semiconductors (OSCs) are promising for applications in emerging memory and electronic devices. However, achieving precise and damage-free patterning of Mg-containing materials remains a critical challenge due to their complex etching mechanisms. In this… read more here.
Keywords: atomic layer; based oxide; ion etching; layer etching ... See more keywords
Control of hexagonal boron nitride dielectric thickness by single layer etching
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Chemistry C"
DOI: 10.1039/c9tc00896a
Abstract: Single layer etching of h-BN is achieved using a two-step remote plasma process. read more here.
Keywords: hexagonal boron; boron nitride; layer etching; single layer ... See more keywords
Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5119033
Abstract: Atomic Layer Etching is performed on SiO2 samples cooled down to a very low temperature (below −100 °C). C4F8 gas flow is injected and molecules physisorb on the cooled surfaces. Etching is then carried out using… read more here.
Keywords: etching sio2; c4f8; microscopy; atomic layer ... See more keywords
Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias
Sign Up to like & getrecommendations! Published in 2021 at "Physics of Plasmas"
DOI: 10.1063/5.0047811
Abstract: Atomic layer etching (ALE), a cyclic process of surface modification and removal of the modified layer, is an emerging damage-less etching technology for semiconductor fabrication with a feature size of less than 10 nm. Among the… read more here.
Keywords: atomic layer; step; physics; layer etching ... See more keywords
Atomic layer etching of chrome using ion beams.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/aaf521
Abstract: In this study, two Cr atomic layer etching (ALE) methods have been applied for the precise control of Cr etching. The first one involves O radical adsorption followed by Cl+ ion desorption (ALE with chemical… read more here.
Keywords: ion desorption; atomic layer; ion; layer etching ... See more keywords
Enhanced atomic layer etching of native aluminum oxide for ultraviolet optical applications
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.4986945
Abstract: The authors report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. The ALE process… read more here.
Keywords: enhanced atomic; layer; atomic layer; aluminum oxide ... See more keywords
Applying sputtering theory to directional atomic layer etching
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Vacuum Science and Technology"
DOI: 10.1116/1.5003393
Abstract: Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation of ALE is called directional ALE because ions transfer momentum to the etching surface during the removal… read more here.
Keywords: layer; atomic layer; sputtering theory; directional ale ... See more keywords