Tens of micron-thick, crack-free yttrium iron garnet films on a Gd3Ga5O12 substrate based on the layer by layer growth method
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-018-9278-7
Abstract: In this paper, the maximum thickness of crack-free yttrium-iron-garnet ferrite film was increased from 7 to 13 µm by layer by layer growth method. Also, the effect of a layer by layer growth method on… read more here.
Keywords: layer; growth method; layer layer; layer growth ... See more keywords
C60 layer growth on intact and Tl-modified Si(1 1 1)5 × 2-Au surfaces
Sign Up to like & getrecommendations! Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.06.202
Abstract: Abstract The Si(1 1 1)5 × 2-Au surface comprises a quasi-one-dimensional surface reconstruction consisting of Au stripes mediated by honeycomb Si chains. In the present study, using STM observations we explored adsorption of thallium (Tl) onto Si(1 1 1)5 … read more here.
Keywords: surface; c60 layers; c60; c60 layer ... See more keywords
Modeling of frost layer growth considering frost porosity
Sign Up to like & getrecommendations! Published in 2018 at "International Journal of Heat and Mass Transfer"
DOI: 10.1016/j.ijheatmasstransfer.2018.05.098
Abstract: Abstract A numerical model for predicting frost layer growth based on computational fluid dynamics is developed. This model can predict the growth behavior of a highly porous frost layer formed by desublimation. A new volumetric… read more here.
Keywords: layer; mass transfer; frost layer; layer growth ... See more keywords
Donor impurity incorporation during layer growth of Zn II-VI semiconductors
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.09.012
Abstract: Abstract The maximum halogen donor concentration in Zn II-VI semiconductors during layer growth is studied using a standard model from statistical mechanics. Here the driving force for incorporation is an increase in entropy upon mixing… read more here.
Keywords: concentration; donor concentration; donor impurity; layer growth ... See more keywords
Abnormal effect of temperature on intermetallic compound layer growth at aluminum-titanium interface: The role of grain boundary diffusion
Sign Up to like & getrecommendations! Published in 2019 at "Materials Letters"
DOI: 10.1016/j.matlet.2019.07.013
Abstract: Abstract The Al3Ti intermetallic compound (IMC) layer growth kinetics at Al-Ti interface was investigated. Surprisingly an abnormal effect of temperature was observed with a thicker IMC layer formed at lower annealing temperature due to the… read more here.
Keywords: diffusion; temperature; layer; layer growth ... See more keywords
Quasi-Layer-by-Layer Growth of Pentacene on HOPG and Au Surfaces
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Physical Chemistry C"
DOI: 10.1021/acs.jpcc.7b05853
Abstract: High-resolution scanning tunneling microscopy (STM) is a promising method for characterizing organic semiconductors to obtain a deep understanding of organic semiconductor physics. However, organic films on conductive single-crystal substrates, which are required for STM, usually… read more here.
Keywords: quasi layer; layer; layer layer; hopg ... See more keywords
Oscillatory Order-Disorder Transition during Layer-by-Layer Growth of Indium Selenide.
Sign Up to like & getrecommendations! Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c04785
Abstract: It is important to understand the polymorph transition and crystal-amorphous phase transition in In2Se3 to tap the potential of this material for resistive memory storage. By monitoring layer-by-layer growth of β-In2Se3 during molecular beam epitaxy… read more here.
Keywords: order disorder; transition; layer; layer growth ... See more keywords
Tailoring atomic layer growth at the liquid-metal interface
Sign Up to like & getrecommendations! Published in 2018 at "Nature Communications"
DOI: 10.1038/s41467-018-07381-w
Abstract: Engineering atomic structures at metal surfaces represents an important step in the development of novel nanomaterials and nanodevices, but relies predominantly on atomic/molecular beam epitaxy under ultrahigh vacuum conditions, where controlling the deposition processes remains… read more here.
Keywords: liquid metal; atomic layer; gold; growth ... See more keywords
DIFFUSION LAYER GROWTH MECHANISM IN ASPN METHOD USING AN IRON CAGE FOR ST52 STEEL
Sign Up to like & getrecommendations! Published in 2017 at "Iranian Journal of Materials Science and Engineering"
DOI: 10.22068/ijmse.14.2.24
Abstract: The mechanism of diffusion layer growth in plasma nitrided coatings applied on a St52 steel using an active screen is investigated. The nitriding was performed at 450, 500 and 550 ◦C temperature nitriding times of… read more here.
Keywords: diffusion layer; mechanism; diffusion; st52 steel ... See more keywords
Study of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth Conditions
Sign Up to like & getrecommendations! Published in 2023 at "Defect and Diffusion Forum"
DOI: 10.4028/p-72252k
Abstract: Buffer layer optimization is a critical technique to mitigate defect propagation from substrate to epilayer, reduce stress, and prevent generation of ingrown defects. In the present study, the impact of dopant transition from substrate to… read more here.
Keywords: growth; buffer layer; growth rates; layer growth ... See more keywords