The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors
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DOI: 10.1039/c6tc04907a
Abstract: We study the influence of post-deposition annealing temperature on the morphology, chemical state and electrical properties of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors. Through careful optimisation of the material deposition and annealing… read more here.
Keywords: single layer; in2o3; in2o3 zno; zno heterojunction ... See more keywords