Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect.
Sign Up to like & getrecommendations! Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr03172j
Abstract: Recently, two-dimensional (2D) few-layer InSe nanosheets have become one of the most interesting materials due to their excellent electron transport, wide bandgap tunability and good metal contact. However, their low photoluminescence (PL) efficiency and hole… read more here.
Keywords: hole mobility; inse; layer inse;
Photoluminescence dynamics in few-layer InSe
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.4.044001
Abstract: We study the optical properties of thin flakes of InSe encapsulated in hBN. More specifically, we investigate the photoluminescence (PL) emission and its dependence on sample thickness and temperature. Through the analysis of the PL… read more here.
Keywords: dynamics layer; layer inse; photoluminescence dynamics; electron hole ... See more keywords