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Published in 2024 at "Advanced Materials Interfaces"
DOI: 10.1002/admi.202400641
Abstract: Wafer‐scale and layered MoS2 films are grown by sulfurizing amorphous MoS2 films deposited on sapphire substrates by using a radio‐frequency sputtering system. To verify the layer numbers of the multi‐layer MoS2 films, atomic layer etchings…
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Keywords:
layer;
layer mos2;
layer number;
film growth ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c02696
Abstract: Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched…
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Keywords:
van der;
effect;
ferromagnet fe5gete2;
der waals ... See more keywords
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Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c02742
Abstract: Interlayer excitons (IXs) in type II van der Waals (vdW) heterostructures are equipped with an oriented permanent dipole moment and long lifetime and thus would allow promising applications in excitonic and optoelectronic devices. However, based…
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Keywords:
momentum indirect;
momentum;
layer number;
interlayer excitons ... See more keywords
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Published in 2024 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.4c14501
Abstract: The layer and stacking engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) gives rise to novel phenomena and multiapplications; thus, TMDs have garnered considerable attention. However, the precisely customized fabrication of stacked 2D materials to date…
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Keywords:
stacking engineering;
polarization sensitive;
layer number;
performance ... See more keywords
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Published in 2022 at "ACS nano"
DOI: 10.1021/acsnano.2c04833
Abstract: Optical contrast is the most common preliminary method to identify layer number of two-dimensional (2D) materials, but it is seldom used as a confirmatory technique. We explain the reason for variation of optical contrast between…
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Keywords:
two dimensional;
number;
number two;
intensity ... See more keywords
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Published in 2025 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.5c16029
Abstract: Chiral metal halide perovskite semiconductors (CMHS) are fascinating semiconductors with unique chiroptical properties and spin-polarized charge transport. Achieving long spin lifetimes and high carrier mobility concurrently is essential to realize the true potential of CMHS…
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Keywords:
cmhs;
layer number;
carrier;
halide ... See more keywords
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Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-04651-3
Abstract: The wetting characteristic of a metal surface can be controlled by employing different coating materials and external stimuli, however, layer number (n) modulated surface swapping between hydrophobicity and hydrophilicity in a multilayer structure to achieve…
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Keywords:
layer number;
surface;
tms sio2;
anti corrosion ... See more keywords
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Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra09370e
Abstract: Two-dimensional (2D) InSe is an attractive semiconductor because of its bandgap in the near infrared region, high carrier mobility and chemical stability. Here, we present systematic investigations on the layer-dependent optical properties of few-layer InSe…
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Keywords:
layer number;
optical properties;
number dependent;
spectroscopy ... See more keywords
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Published in 2024 at "Nanoscale"
DOI: 10.1039/d4nr03631j
Abstract: Molybdenum disulfide (MoS2) is a notable two-dimensional (2D) transition metal dichalcogenide (TMD) with properties ideal for nanoelectronic and optoelectronic applications. With growing interest in the material, it is critical to understand its layer-number-dependent properties and…
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Keywords:
diarylethene;
mos2;
number dependent;
layer number ... See more keywords
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Published in 2025 at "Physica Scripta"
DOI: 10.1088/1402-4896/addd74
Abstract: Two-dimensional (2D) transition metal dicakcoganite (TMD) materials have unique electronic and optical properties. The electronic band structure of TMDs alter as a function of layer numbers, which results in modifications of their characteristic properties. Therefore,…
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Keywords:
layer;
tmd materials;
method;
layer number ... See more keywords
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Published in 2022 at "Physical review letters"
DOI: 10.1103/physrevlett.128.017201
Abstract: MnBi_{2}Te_{4}, an intrinsic magnetic topological insulator, has shown layer-number-correlated magnetic and topological phases. More interestingly, in the isostructural material MnSb_{2}Te_{4}, the antiferromagnetic (AFM) and ferromagnetic (FM) states have been both observed in the bulk counterparts,…
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Keywords:
transition;
number;
number dependent;
mnsb ... See more keywords