A theoretical study of gating effect on InP-InGaAs HEMTs by tri-layer T–shape gate
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DOI: 10.1016/j.mee.2019.02.004
Abstract: Abstract To maintain fast development of communication toward terrahertz frequencies, InP-based high electron mobility transistors in InGaAs/InAlAs heterojunctions with ultra-short T-shape gates are constantly demanded. Our earlier work has successfully developed a 10 nm wide T-shape… read more here.
Keywords: tri layer; shape gate; shape; layer shape ... See more keywords