Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy.
Sign Up to like & getrecommendations! Published in 2018 at "Advanced materials"
DOI: 10.1002/adma.201800754
Abstract: 2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between… read more here.
Keywords: black arsenic; extreme plane; layered semiconductor; plane anisotropy ... See more keywords
Nature of radiative recombination processes in layered semiconductor PbCdI2 nanostructural scintillation material
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2016.12.054
Abstract: Abstract We report on the efficient photoluminescence (PL) and radioluminescence (RL) of the PbI 2 nanoclusters (NCLs), which are naturally formed in the nanostructured Pb 1-X Cd x I 2 alloys (X=0.70). Here, we carried… read more here.
Keywords: radiative recombination; nature radiative; semiconductor; layered semiconductor ... See more keywords
Lateral layered semiconductor multijunctions for novel electronic devices.
Sign Up to like & getrecommendations! Published in 2022 at "Chemical Society reviews"
DOI: 10.1039/d1cs01092a
Abstract: Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present… read more here.
Keywords: semiconductor multijunctions; layered semiconductor; lateral layered; semiconductor ... See more keywords
Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study
Sign Up to like & getrecommendations! Published in 2021 at "2D Materials"
DOI: 10.1088/2053-1583/ac207b
Abstract: The structure and mobility of dislocations in the layered semiconductor InSe is studied within a multiscale approach based on generalized Peierls–Nabarro model with material-specific parametrization derived from first principles. The plasticity of InSe turns out… read more here.
Keywords: inse; semiconductor inse; layered semiconductor; structure mobility ... See more keywords
Identification of Mn dopant in the structure of TlInS2 layered semiconductor
Sign Up to like & getrecommendations! Published in 2019 at "Materials Research Express"
DOI: 10.1088/2053-1591/ab063e
Abstract: The structure of TlInS2 layered semiconductor doped with 0.3% concentration of Mn impurity has been investigated by using x-ray diffraction (XRD) and Electron Paramagnetic Resonance (EPR) spectroscopy. The experiments were carried out to probe the… read more here.
Keywords: layered semiconductor; structure; structure tlins2; tlins2 layered ... See more keywords