Precision Layered Stealth Dicing of SiC Wafers by Ultrafast Lasers
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DOI: 10.3390/mi13071011
Abstract: With the intrinsic material advantages, silicon carbide (SiC) power devices can operate at high voltage, high switching frequency, and high temperature. However, for SiC wafers with high hardness (Mohs hardness of 9.5), the diamond blade… read more here.
Keywords: sic wafers; stealth dicing; layered stealth; ultrafast lasers ... See more keywords