Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching.
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DOI: 10.1088/1361-6528/ab704a
Abstract: Electrochemical etching of silicon carbide (SiC) material has received increasing attention in recent years, due to its simple procedure, low cost and significance in exploring novel optoelectronic devices. In this paper, 4H-SiC substrates were electrochemically… read more here.
Keywords: constant current; layering phenomenon; sic porous; electrochemical etching ... See more keywords