Characterization of thin SiGe layers on Si (001) by spectroscopic ellipsometry for Ge fractions from 0 to 100
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DOI: 10.1016/j.apsusc.2016.08.091
Abstract: Abstract We report on the investigation of thin, epitaxially grown Si 1- x Ge x layers on Si(001) substrates by spectroscopic ellipsometry over the entire composition range. Si 1-x Ge x layers with Ge fractions… read more here.
Keywords: layers 001; sige layers; spectroscopic ellipsometry; thin sige ... See more keywords