Synthesis of Hexagonal AlN and GaN Layers on a Si(100) Substrate by Chloride Vapor-Phase Epitaxy
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DOI: 10.1134/s1063784219040054
Abstract: Synthesis of AlN and GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy has been considered. The process includes sulfidizing of the silicon surface, nucleation and growth of an AlN layer, and then formation… read more here.
Keywords: aln gan; layers 100; gan layers; 100 substrate ... See more keywords
Construction of Structure-Controlled Perovskite Ultra-Thin Layers on Au(100) Single-Crystal Surface via Self-Assembled Monolayer of 4-Aminothiophenol
Sign Up to like & getrecommendations! Published in 2021 at "Bulletin of the Chemical Society of Japan"
DOI: 10.1246/bcsj.20200271
Abstract: In order to control a crystal configuration of MAPbBr3 (MA = CH3NH3+) perovskite ultra-thin layers, the Au(100) single-crystal, the self-assembled monolayer (SAM) of 4-aminothiophenol (4-ATP), and ... read more here.
Keywords: ultra thin; single crystal; perovskite ultra; layers 100 ... See more keywords