Effects of oxygen-inserted layers on diffusion of boron, phosphorus, and arsenic in silicon for ultra-shallow junction formation
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DOI: 10.1063/1.5022078
Abstract: The effects of oxygen-inserted (OI) layers on the diffusion of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) are investigated, for ultra-shallow junction formation by high-dose ion implantation followed by rapid thermal annealing.… read more here.
Keywords: inserted layers; oxygen inserted; layers diffusion; junction ... See more keywords